1 ELM32403LA-S general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-case steady-state rjc 3 c /w maximum junction-to-ambient steady-state rja 75 c /w parameter symbol limit unit note drain-source voltage vds -40 v gate-source voltage vgs 20 v continuous drain current ta=25c id -8 a ta=70c -6 pulsed drain current idm -32 a 3 power dissipation ta=25c pd 28 w ta=70c 18 junction and storage temperature range tj, tstg -55 to 150 c ELM32403LA-S uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=-40v ? id=-8a ? rds(on) < 55m (vgs=-10v) ? rds(on) < 94m (vgs=-4.5v) 4 - pin configuration circuit single p-channel mosfet s g d to-252-3(top view) pin no. pin name 1 gate 2 drain 3 source 1 3 2 t a b
2 ELM32403LA-S electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain-source breakdown voltage bvdss id=-250a, vgs=0v -40 v zero gate voltage drain current idss vds=-32v, vgs= 0v -1 a vds=-30v, vgs= 0v, tj=125 c -10 gate-body leakage current igss vds=0v, vgs= 20v 250 na gate threshold voltage vgs(th) vds=vgs, id=-250 a -1.0 -1.5 -2.5 v on state drain current id(on) vgs=-10v, vds=-5v -32 a 1 static drain-source on-resistance rds(on) vgs=-10v, id=- 8a 38 55 m 1 vgs =- 4.5v, id =-6 a 65 94 m forward transconductance gfs vds=-10v, id=- 8a 11 s 1 diode forward voltage vsd is =if , vgs=0v -1 v 1 max. body -diode continuous current is -1.3 a pulsed body -diode current ism -2.6 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=-10v, f=1mhz 690 pf output capacitance coss 310 pf reverse transfer capacitance crss 75 pf switching parameters total gate charge qg vgs=-10v, vds=-20v id=-8a 14.0 nc 2 gate-source charge qgs 2.2 nc 2 gate-drain charge qgd 1.9 nc 2 turn - on delay time td(on) vgs=-10v, vds=-20v id-1a, rl=1, rgen=6 6.7 13.4 ns 2 turn - on rise time tr 9.7 19.4 ns 2 turn - off delay time td(off) 19.8 35.6 ns 2 turn - off fall time tf 12.3 22.2 ns 2 body diode reverse recovery time trr if=-5a, di/dt=100a/ s 15.5 ns body diode reverse recovery charge qrr 7.9 nc ta=25 c single p-channel mosfet 4 - note : 1. pulse test : pulsed width 300sec and duty cycle 2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%.
3 typical electrical and thermal characteristics ELM32403LA-S single p-channel mosfet 4 - p-channel logic level enhancement mode field effect transistor p5504edg to-252 lead-free niko-sem 3 aug-19-2004 t s
4 ELM32403LA-S single p-channel mosfet 4 - p-channel logic level enhancement mode field effect transistor p5504edg to-252 lead-free niko-sem 4 aug-19-2004
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